to-251-3l plastic-encapsulate mosfets CJD4410 n-channel 30-v(d-s) mosfet feature trenchfet power mosfet applications z load switch z battery switch maximum ratings ( t a =25 unless otherwise noted) parameter symbol value u nit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current i d 7.5 a power dissipation (note 1, t a =25 ) 1 maximum power dissipation (note 2, t c =25 ) p d 15 w thermal resistance from junction to ambient (t 10s )r ja 125 /w operating junction temperature t j 150 storage temperature t stg -55 ~+150 . 51-3 l to-2 1. gate 2. drain 3. source 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics ( t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 30 gate-source thre shold voltage v gs(th) v ds =v gs , i d =250a 1 3 v gate-source leakage i gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =30v, v gs =0v 1 a v gs =10v, i d =10a 13.5 drain-source on-state resistance (note 3) r ds(on) v gs =4.5v, i d =5a 20 m ? forward transconductance (note 3) g fs v ds =15v, i d = 5 a 8 s body diode voltage (note 3) v sd i s =2.3a, v gs =0 1.1 v dynamic (note 4) turn-on delay time t d(on) 15 rise time t r 15 turn-off delay time t d(off) 60 fall time t f v dd =25v, r l =25 ? , i d =1a, v gen =10v,r g =6 ? 25 ns gate resistance r g f =1mhz 0.5 2.7 ? notes : 1. this test is performed with no heat sink at t a =25 2. this test is performed wi th inifite heat sink at t c =25 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not s ubject to production testing. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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